TY - JOUR
T1 - Unveiling the exciton formation in time, energy and momentum domain in layered van der Waals semiconductors
AU - Gosetti, Valentina
AU - Cervantes-Villanueva, Jorge
AU - Mor, Selene
AU - Sangalli, Davide
AU - García-Cristóbal, Alberto
AU - Molina-Sánchez, Alejandro
AU - Agekyan, Vadim F
AU - Tuniz, Manuel
AU - Puntel, Denny
AU - Bronsch, Wibke
AU - Cilento, Federico
AU - Pagliara, Stefania
PY - 2025
Y1 - 2025
N2 - Resolving the early-stage dynamics of exciton formation following non-resonant photoexcitation in time, energy, and momentum is quite challenging due to their inherently fast timescales and the proximity of the excitonic state to the bottom of the conduction band. In this study, by combining time- and angle-resolved photoemission spectroscopy with ab initio numerical simulations, we capture the timing of the early-stage exciton dynamics in energy and momentum, starting from the photoexcited population in the conduction band, progressing through the formation of free excitons, and ultimately leading to their trapping in lattice deformations. The chosen material is bismuth tri-iodide (BiI\r\n), a layered semiconductor with a rich landscape of excitons in the electronic structure both in bulk and in monolayer form. The obtained results, providing a full characterization of the exciton formation, elucidate the early stages of the physical phenomena underlying the operation of the ultrafast semiconductor device.
AB - Resolving the early-stage dynamics of exciton formation following non-resonant photoexcitation in time, energy, and momentum is quite challenging due to their inherently fast timescales and the proximity of the excitonic state to the bottom of the conduction band. In this study, by combining time- and angle-resolved photoemission spectroscopy with ab initio numerical simulations, we capture the timing of the early-stage exciton dynamics in energy and momentum, starting from the photoexcited population in the conduction band, progressing through the formation of free excitons, and ultimately leading to their trapping in lattice deformations. The chosen material is bismuth tri-iodide (BiI\r\n), a layered semiconductor with a rich landscape of excitons in the electronic structure both in bulk and in monolayer form. The obtained results, providing a full characterization of the exciton formation, elucidate the early stages of the physical phenomena underlying the operation of the ultrafast semiconductor device.
KW - exciton dynamics
KW - photoemission
KW - exciton dynamics
KW - photoemission
UR - https://publicatt.unicatt.it/handle/10807/320396
UR - https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=105009891822&origin=inward
UR - https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=105009891822&origin=inward
U2 - 10.1016/j.progsurf.2025.100777
DO - 10.1016/j.progsurf.2025.100777
M3 - Article
SN - 0079-6816
VL - 2025
SP - 100777
EP - 100781
JO - Progress in Surface Science
JF - Progress in Surface Science
IS - 100
ER -