Terahertz intersubband absorption and conduction band alignment in n-type Si/SiGe multiple quantum wells

Gabriele Ciasca, M De Seta, G Capellini, F Evangelisti, M Ortolani, M Virgilio, G Grosso, A Nucara, P. Calvani

Risultato della ricerca: Contributo in rivistaArticolo in rivistapeer review

11 Citazioni (Scopus)

Abstract

Absorption due to conduction intersubband transitions is studied in n-type s-Si/SiGe multiquantum wells MQW of different well widths and barrier composition grown by UHV-chemical vapor deposition CVD . The measured intersubband transition energies are compared with the theoretical results of a tight-binding model which provides the electronic band structure of the complete MQW system throughout the whole Brillouin zone. Our findings demonstrate both the high quality of the CVD grown MQWs and the effectiveness of the adopted tight-binding model in describing band profiles and electronic structures of SiGe multilayer systems. In particular we have evaluated the conduction band offsets in the investigated structures.
Lingua originaleEnglish
pagine (da-a)085302-1-085302-7
Numero di pagine7
RivistaPHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS
Volume79
DOI
Stato di pubblicazionePubblicato - 2009

Keywords

  • Terahertz Spectroscopy

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