Abstract
Absorption due to conduction intersubband transitions is studied in n-type s-Si/SiGe multiquantum wells
MQW of different well widths and barrier composition grown by UHV-chemical vapor deposition CVD .
The measured intersubband transition energies are compared with the theoretical results of a tight-binding
model which provides the electronic band structure of the complete MQW system throughout the whole
Brillouin zone. Our findings demonstrate both the high quality of the CVD grown MQWs and the effectiveness
of the adopted tight-binding model in describing band profiles and electronic structures of SiGe multilayer
systems. In particular we have evaluated the conduction band offsets in the investigated structures.
Lingua originale | English |
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pagine (da-a) | 085302-1-085302-7 |
Numero di pagine | 7 |
Rivista | PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS |
Volume | 79 |
DOI | |
Stato di pubblicazione | Pubblicato - 2009 |
Keywords
- Terahertz Spectroscopy