Absorption due to conduction intersubband transitions is studied in n-type s-Si/SiGe multiquantum wells MQW of different well widths and barrier composition grown by UHV-chemical vapor deposition CVD . The measured intersubband transition energies are compared with the theoretical results of a tight-binding model which provides the electronic band structure of the complete MQW system throughout the whole Brillouin zone. Our ﬁndings demonstrate both the high quality of the CVD grown MQWs and the effectiveness of the adopted tight-binding model in describing band proﬁles and electronic structures of SiGe multilayer systems. In particular we have evaluated the conduction band offsets in the investigated structures.
|Numero di pagine||7|
|Rivista||PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS|
|Stato di pubblicazione||Pubblicato - 2009|
- Terahertz Spectroscopy