Surface electronic structure at Si(100)-(2x1)

Luca Gavioli, Maria Grazia Betti, Carlo Mariani, Antonio Cricenti

Risultato della ricerca: Contributo in rivistaArticolo in rivistapeer review

9 Citazioni (Scopus)

Abstract

The surface electronic structure of the clean Si(100)-(2x1) surface at room temperature is studied by high-resolution electron-energy-loss spectroscopy. Main absorption edge is detected at similar to 0.4 eV, which corresponds to the energy gap of the system, further structures are singled out at 0.8 and 1.25 eV and ascribed to interband electronic transitions between dimer-related levels. The paramount importance of cleanness is addressed showing and quantifying the effect of the residual gas atmosphere (that can be present in ultrahigh vacuum) on the electronic structure.
Lingua originaleEnglish
pagine (da-a)541-545
Numero di pagine5
RivistaJournal of Electron Spectroscopy and Related Phenomena
Volume76
DOI
Stato di pubblicazionePubblicato - 1995

Keywords

  • ANGLE-RESOLVED-PHOTOEMISSION
  • ANTIMONY
  • DIMERS
  • LOW-TEMPERATURE
  • RECONSTRUCTED SURFACES
  • SCANNING TUNNELING MICROSCOPY
  • SI(001)
  • SI(100)2X1 SURFACE
  • STATES

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