Spectroscopic evidence of in-gap states at the SrTiO3/LaAlO3 ultrathin interfaces

Giovanni Drera, Francesco Banfi, Luigi Ermenegildo Sangaletti, F. Bondino, E. Magnano, J. Huijben, M. Huijben, G. Rijnders, D. H.A. Blank, H. Hilgenkamp, A. Brinkman

Risultato della ricerca: Contributo in rivistaArticolo in rivistapeer review

35 Citazioni (Scopus)

Abstract

Experimental evidence of differences in the electronic properties of an insulating and a conducting SrTiO3/LaAlO3 interface is provided by soft x-ray spectroscopies. While core level photoemission measurements show that only at the conducting interface Ti ions with 3+ ionization state are present, by using resonant photoemission and x-ray absorption spectroscopies, it is shown that in both samples in-gap states with a Ti 3d character are present, but their density is higher at the conducting interface.
Lingua originaleEnglish
pagine (da-a)N/A-N/A
Numero di pagine3
RivistaApplied Physics Letters
Volume98
DOI
Stato di pubblicazionePubblicato - 2011

Keywords

  • Devices
  • Oxides Heterostructures
  • Photoemision
  • Transport

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