Spectroscopic evidence of in-gap states at the SrTiO3/LaAlO3 ultrathin interfaces

Giovanni Drera; Francesco Banfi; F. Federici Canova; P. Borghetti; Luigi Ermenegildo Sangaletti; F. Bondino; E. Magnano; J. Huijben; M. Huijben; G. Rijnders; D. H.A. Blank; H. Hilgenkamp; A. Brinkman

doi:10.1063/1.3549177

Spectroscopic evidence of in-gap states at the SrTiO3/LaAlO3 ultrathin interfaces

Giovanni Drera, Francesco Banfi, F. Federici Canova, P. Borghetti, Luigi Ermenegildo Sangaletti, F. Bondino, E. Magnano, J. Huijben, M. Huijben, G. Rijnders, D. H.A. Blank, H. Hilgenkamp, A. Brinkman

Risultato della ricerca: Contributo in rivista › Articolo in rivista › peer review

35 Citazioni (Scopus)

Abstract

Experimental evidence of differences in the electronic properties of an insulating and a conducting SrTiO3/LaAlO3 interface is provided by soft x-ray spectroscopies. While core level photoemission measurements show that only at the conducting interface Ti ions with 3+ ionization state are present, by using resonant photoemission and x-ray absorption spectroscopies, it is shown that in both samples in-gap states with a Ti 3d character are present, but their density is higher at the conducting interface.

Lingua originale	English
pagine (da-a)	N/A-N/A
Numero di pagine	3
Rivista	Applied Physics Letters
Volume	98
DOI	https://doi.org/10.1063/1.3549177
Stato di pubblicazione	Pubblicato - 2011

Keywords

Devices
Oxides Heterostructures
Photoemision
Transport

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10.1063/1.3549177

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abstract = "Experimental evidence of differences in the electronic properties of an insulating and a conducting SrTiO3/LaAlO3 interface is provided by soft x-ray spectroscopies. While core level photoemission measurements show that only at the conducting interface Ti ions with 3+ ionization state are present, by using resonant photoemission and x-ray absorption spectroscopies, it is shown that in both samples in-gap states with a Ti 3d character are present, but their density is higher at the conducting interface.",

keywords = "Devices, Oxides Heterostructures, Photoemision, Transport, Devices, Oxides Heterostructures, Photoemision, Transport",

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T1 - Spectroscopic evidence of in-gap states at the SrTiO3/LaAlO3 ultrathin interfaces

AU - Drera, Giovanni

AU - Banfi, Francesco

AU - Canova, F. Federici

AU - Borghetti, P.

AU - Sangaletti, Luigi Ermenegildo

AU - Bondino, F.

AU - Magnano, E.

AU - Huijben, J.

AU - Huijben, M.

AU - Rijnders, G.

AU - Blank, D. H.A.

AU - Hilgenkamp, H.

AU - Brinkman, A.

PY - 2011

Y1 - 2011

N2 - Experimental evidence of differences in the electronic properties of an insulating and a conducting SrTiO3/LaAlO3 interface is provided by soft x-ray spectroscopies. While core level photoemission measurements show that only at the conducting interface Ti ions with 3+ ionization state are present, by using resonant photoemission and x-ray absorption spectroscopies, it is shown that in both samples in-gap states with a Ti 3d character are present, but their density is higher at the conducting interface.

AB - Experimental evidence of differences in the electronic properties of an insulating and a conducting SrTiO3/LaAlO3 interface is provided by soft x-ray spectroscopies. While core level photoemission measurements show that only at the conducting interface Ti ions with 3+ ionization state are present, by using resonant photoemission and x-ray absorption spectroscopies, it is shown that in both samples in-gap states with a Ti 3d character are present, but their density is higher at the conducting interface.

KW - Devices

KW - Oxides Heterostructures

KW - Photoemision

KW - Transport

KW - Devices

KW - Oxides Heterostructures

KW - Photoemision

KW - Transport

UR - http://hdl.handle.net/10807/9126

UR - http://link.aip.org/link/applab/v98/i5/p052907/s1&agg=doi

U2 - 10.1063/1.3549177

DO - 10.1063/1.3549177

M3 - Article

SN - 0003-6951

VL - 98

SP - N/A-N/A

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Spectroscopic evidence of in-gap states at the SrTiO3/LaAlO3 ultrathin interfaces

Abstract

Keywords

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