Hybridized C-O-Si Interface States at the Origin of Efficiency Improvement in CNT/Si Solar Cells

Luigi Ermenegildo Sangaletti, Stefania Pagliara, Stefano Ponzoni, Simona Achilli, Chiara Pintossi, Giovanni Drera, Paola Castrucci, Maurizio De Crescenzi

Risultato della ricerca: Contributo in rivistaArticolo in rivistapeer review

10 Citazioni (Scopus)

Abstract

Despite the astonishing values of the power conversion efficiency reached, in just less than a decade, by the carbon nanotube/silicon (CNT/Si) solar cells, many doubts remain on the underlying transport mechanisms across the CNT/Si heterojunction. Here, by combining transient optical spectroscopy in the femtosecond timescale, X-ray photoemission, and a systematic tracking of I-V curves across all phases of the interlayer SiOx growth at the interface, we grasp the mechanism that adequately preserves charge separation at the junction, hindering the photoexcited carrier recombination. Moreover, supported by ab initio calculations aimed to model the complex CNT-Si heterointerface, we show that oxygen-related states at the interface act as entrapping centers for the photoexcited electrons, thus preventing recombination with holes that can flow from Si to CNT across the SiOx layer.
Lingua originaleEnglish
pagine (da-a)16627-16634
Numero di pagine8
RivistaACS APPLIED MATERIALS & INTERFACES
Volume9
DOI
Stato di pubblicazionePubblicato - 2017

Keywords

  • CNT-Si hybrid junctions
  • J-V characteristics
  • carbon nanotubes
  • interface states
  • photoemission
  • solar cell
  • transient spectroscopy

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