Abstract
High-temperature surface metallization of Si(100) is observed at T > 900
K by high-resolution electron-energy-loss and ultraviolet photoemission
spectroscopy. Metallization takes place well below the incomplete
surface melting temperature and is consistent with the Si dimer
dynamics, characterized by an instantaneous symmetriclike dimer
configuration. The surface free carrier concentration in the metallic
phase has been evaluated, reaching (at 1170 K) the same order of
magnitude of the surface dimer density.
| Lingua originale | Inglese |
|---|---|
| pagine (da-a) | 3869-3872 |
| Numero di pagine | 4 |
| Rivista | Physical Review Letters |
| Volume | 77 |
| DOI | |
| Stato di pubblicazione | Pubblicato - 1996 |
Keywords
- ASYMMETRIC DIMERS
- ELECTRONIC-STRUCTURE
- ENERGY-LOSS SPECTROSCOPY
- HIGH-TEMPERATURE
- PHASE-TRANSITION
- PHOTOELECTRON DIFFRACTION
- PHOTOEMISSION
- RECONSTRUCTED SURFACES
- SI(001) SURFACE
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