Dynamics-induced surface metallization of Si(100)

Luca Gavioli, Maria Grazia Betti, Carlo Mariani

Risultato della ricerca: Contributo in rivistaArticolo in rivistapeer review

41 Citazioni (Scopus)

Abstract

High-temperature surface metallization of Si(100) is observed at T > 900 K by high-resolution electron-energy-loss and ultraviolet photoemission spectroscopy. Metallization takes place well below the incomplete surface melting temperature and is consistent with the Si dimer dynamics, characterized by an instantaneous symmetriclike dimer configuration. The surface free carrier concentration in the metallic phase has been evaluated, reaching (at 1170 K) the same order of magnitude of the surface dimer density.
Lingua originaleEnglish
pagine (da-a)3869-3872
Numero di pagine4
RivistaPhysical Review Letters
Volume77
DOI
Stato di pubblicazionePubblicato - 1996

Keywords

  • ASYMMETRIC DIMERS
  • ELECTRONIC-STRUCTURE
  • ENERGY-LOSS SPECTROSCOPY
  • HIGH-TEMPERATURE
  • PHASE-TRANSITION
  • PHOTOELECTRON DIFFRACTION
  • PHOTOEMISSION
  • RECONSTRUCTED SURFACES
  • SI(001) SURFACE

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