Core-level photoemission study of 2D ordered Bi/Si(100) interfaces

Luca Gavioli; Carlo Mariani; Valdis Corradini

doi:10.1016/S0039-6028(99)00426-4

Core-level photoemission study of 2D ordered Bi/Si(100) interfaces

Luca Gavioli, Carlo Mariani, Valdis Corradini

Risultato della ricerca: Contributo in rivista › Articolo in rivista › peer review

7 Citazioni (Scopus)

Abstract

A high resolution fore-level photoemission investigation of 2D ordered Bi layers grown on Si(100)-(2 x 1) is presented. We study the Si 2p and Bi 5d core-levels at room temperature as a function of coverage and in the reconstructed phases. The different Bi structural configurations around the monolayer coverage and in the (2 x n)-reconstructed phase are derived from the core-level lineshape evolution. By following the Fermi level pinning, the presence of Bi-induced occupied electronic states close to the Si mid-gap is suggested. (C) 1999 Elsevier Science B.V. All rights reserved.

Lingua originale	English
pagine (da-a)	126-136
Numero di pagine	11
Rivista	Surface Science
Volume	430
DOI	https://doi.org/10.1016/S0039-6028(99)00426-4
Stato di pubblicazione	Pubblicato - 1999

Keywords

bismuth
metal-semiconductor interfaces
silicon
surface relaxation and reconstruction synchrotron radiation photoelectron spectroscopy

Accesso al documento

10.1016/S0039-6028(99)00426-4

Altri file e collegamenti

Link a IRIS PubliCatt

Cita questo

@article{3b57117c7e2e44b68ad4a3ce1ad672bb,

title = "Core-level photoemission study of 2D ordered Bi/Si(100) interfaces",

abstract = "A high resolution fore-level photoemission investigation of 2D ordered Bi layers grown on Si(100)-(2 x 1) is presented. We study the Si 2p and Bi 5d core-levels at room temperature as a function of coverage and in the reconstructed phases. The different Bi structural configurations around the monolayer coverage and in the (2 x n)-reconstructed phase are derived from the core-level lineshape evolution. By following the Fermi level pinning, the presence of Bi-induced occupied electronic states close to the Si mid-gap is suggested. (C) 1999 Elsevier Science B.V. All rights reserved.",

keywords = "bismuth, metal-semiconductor interfaces, silicon, surface relaxation and reconstruction synchrotron radiation photoelectron spectroscopy, bismuth, metal-semiconductor interfaces, silicon, surface relaxation and reconstruction synchrotron radiation photoelectron spectroscopy",

author = "Luca Gavioli and Carlo Mariani and Valdis Corradini",

year = "1999",

doi = "10.1016/S0039-6028(99)00426-4",

language = "English",

volume = "430",

pages = "126--136",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier BV:PO Box 211, 1000 AE Amsterdam Netherlands:011 31 20 4853757, 011 31 20 4853642, 011 31 20 4853641, EMAIL: nlinfo-f@elsevier.nl, INTERNET: http://www.elsevier.nl, Fax: 011 31 20 4853598",

}

TY - JOUR

T1 - Core-level photoemission study of 2D ordered Bi/Si(100) interfaces

AU - Gavioli, Luca

AU - Mariani, Carlo

AU - Corradini, Valdis

PY - 1999

Y1 - 1999

N2 - A high resolution fore-level photoemission investigation of 2D ordered Bi layers grown on Si(100)-(2 x 1) is presented. We study the Si 2p and Bi 5d core-levels at room temperature as a function of coverage and in the reconstructed phases. The different Bi structural configurations around the monolayer coverage and in the (2 x n)-reconstructed phase are derived from the core-level lineshape evolution. By following the Fermi level pinning, the presence of Bi-induced occupied electronic states close to the Si mid-gap is suggested. (C) 1999 Elsevier Science B.V. All rights reserved.

AB - A high resolution fore-level photoemission investigation of 2D ordered Bi layers grown on Si(100)-(2 x 1) is presented. We study the Si 2p and Bi 5d core-levels at room temperature as a function of coverage and in the reconstructed phases. The different Bi structural configurations around the monolayer coverage and in the (2 x n)-reconstructed phase are derived from the core-level lineshape evolution. By following the Fermi level pinning, the presence of Bi-induced occupied electronic states close to the Si mid-gap is suggested. (C) 1999 Elsevier Science B.V. All rights reserved.

KW - bismuth

KW - metal-semiconductor interfaces

KW - silicon

KW - surface relaxation and reconstruction synchrotron radiation photoelectron spectroscopy

KW - bismuth

KW - metal-semiconductor interfaces

KW - silicon

KW - surface relaxation and reconstruction synchrotron radiation photoelectron spectroscopy

UR - http://hdl.handle.net/10807/20031

U2 - 10.1016/S0039-6028(99)00426-4

DO - 10.1016/S0039-6028(99)00426-4

M3 - Article

VL - 430

SP - 126

EP - 136

JO - Surface Science

JF - Surface Science

SN - 0039-6028

ER -

Core-level photoemission study of 2D ordered Bi/Si(100) interfaces

Abstract

Keywords

Accesso al documento

Altri file e collegamenti

Fingerprint

Cita questo