Abstract
A high resolution fore-level photoemission investigation of 2D ordered
Bi layers grown on Si(100)-(2 x 1) is presented. We study the Si 2p and
Bi 5d core-levels at room temperature as a function of coverage and in
the reconstructed phases. The different Bi structural configurations
around the monolayer coverage and in the (2 x n)-reconstructed phase are
derived from the core-level lineshape evolution. By following the Fermi
level pinning, the presence of Bi-induced occupied electronic states
close to the Si mid-gap is suggested. (C) 1999 Elsevier Science B.V. All
rights reserved.
Lingua originale | Inglese |
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pagine (da-a) | 126-136 |
Numero di pagine | 11 |
Rivista | Surface Science |
Volume | 430 |
DOI | |
Stato di pubblicazione | Pubblicato - 1999 |
Keywords
- bismuth
- metal-semiconductor interfaces
- silicon
- surface relaxation and reconstruction synchrotron radiation photoelectron spectroscopy