Core-level photoemission study of 2D ordered Bi/Si(100) interfaces

Luca Gavioli, Carlo Mariani, Valdis Corradini

Risultato della ricerca: Contributo in rivistaArticolo in rivistapeer review

7 Citazioni (Scopus)

Abstract

A high resolution fore-level photoemission investigation of 2D ordered Bi layers grown on Si(100)-(2 x 1) is presented. We study the Si 2p and Bi 5d core-levels at room temperature as a function of coverage and in the reconstructed phases. The different Bi structural configurations around the monolayer coverage and in the (2 x n)-reconstructed phase are derived from the core-level lineshape evolution. By following the Fermi level pinning, the presence of Bi-induced occupied electronic states close to the Si mid-gap is suggested. (C) 1999 Elsevier Science B.V. All rights reserved.
Lingua originaleEnglish
pagine (da-a)126-136
Numero di pagine11
RivistaSurface Science
Volume430
DOI
Stato di pubblicazionePubblicato - 1999

Keywords

  • bismuth
  • metal-semiconductor interfaces
  • silicon
  • surface relaxation and reconstruction synchrotron radiation photoelectron spectroscopy

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