BISMUTH ON GASB(110): ELECTRONIC AND DIELECTRIC PROPERTIES

Luca Gavioli, Maria Grazia Betti, Carlo Mariani, Paolo Casarini

Risultato della ricerca: Contributo in rivistaArticolo in rivistapeer review

11 Citazioni (Scopus)

Abstract

We present a high-resolution electron-energy-loss-spectroscopy study of the electronic and dielectric properties of the (1 X 1) and (1 X 2) Bi/GaSb(110) interfaces, in the energy region of the semiconductor bulk gap. Among the semimetal/III-V(110) interfaces, we found this as the unique ordered-system showing a semimetallic character when one monolayer of semimetal is deposited on the (110) surface, at room temperature. Electronic loss structures induced by transitions among localized states have been identified for the (1 X 1) interface, the most prominent lying at about I eV. The (1 X 2) superstructure, produced through an appropriate thermal treatment, is still semimetallic, while the electronic loss structures shift to lower energies and present a clear dependence on the symmetry direction of the surface Brillouin zone.
Lingua originaleEnglish
pagine (da-a)2911-2914
Numero di pagine4
RivistaPHYSICAL REVIEW. B, CONDENSED MATTER
Volume49
DOI
Stato di pubblicazionePubblicato - 1994

Keywords

  • HREELS
  • bismuth
  • dielectric properties
  • photoemission
  • semiconductor surfaces

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