Bismuth-induced restructuring of the GaSb(110) surface

Luca Gavioli, T. Van Gemmeren, L. Lottermoser, G. Falkenberg, L. Seehofer, R. Johnson, C. Mariani

Risultato della ricerca: Contributo in rivistaArticolo in rivistapeer review

12 Citazioni (Scopus)

Abstract

The structure of the GaSb(110)(1 x 2)-Bi reconstruction has been solved using surface x-ray diffraction, scanning tunneling microscopy, and photoelectron spectroscopy. The ideal GaSb(110) surface is terminated with zigzag chains of anions and cations running in the [1 (1) over bar 0] direction. In the Bi-induced (1 X 2) reconstruction we find that every second zigzag chain in the uppermost substrate layer is missing. The reconstructed surface is terminated with a full monolayer of Bi atoms which also form zigzag chains. The Bi atoms in the chains bond alternately to the first and second layer substrate atoms and the Bi chains are inclined at 34 degrees to the (110) plane
Lingua originaleEnglish
pagine (da-a)3749-3752
Numero di pagine4
RivistaPHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS
DOI
Stato di pubblicazionePubblicato - 1998

Keywords

  • Metal/semiconductor interface
  • STM
  • surface x ray diffraction

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