TY - JOUR
T1 - Bismuth-induced restructuring of the GaSb(110) surface
AU - Gavioli, Luca
PY - 1998
Y1 - 1998
N2 - The structure of the GaSb(110)(1 x 2)-Bi reconstruction has been solved using surface x-ray diffraction, scanning tunneling microscopy, and photoelectron spectroscopy. The ideal GaSb(110) surface is terminated with zigzag chains of anions and cations running in the [1 (1) over bar 0] direction. In the Bi-induced (1 X 2) reconstruction we find that every second zigzag chain in the uppermost substrate layer is missing. The reconstructed surface is terminated with a full monolayer of Bi atoms which also form zigzag chains. The Bi atoms in the chains bond alternately to the first and second layer substrate atoms and the Bi chains are inclined at 34 degrees to the (110) plane
AB - The structure of the GaSb(110)(1 x 2)-Bi reconstruction has been solved using surface x-ray diffraction, scanning tunneling microscopy, and photoelectron spectroscopy. The ideal GaSb(110) surface is terminated with zigzag chains of anions and cations running in the [1 (1) over bar 0] direction. In the Bi-induced (1 X 2) reconstruction we find that every second zigzag chain in the uppermost substrate layer is missing. The reconstructed surface is terminated with a full monolayer of Bi atoms which also form zigzag chains. The Bi atoms in the chains bond alternately to the first and second layer substrate atoms and the Bi chains are inclined at 34 degrees to the (110) plane
KW - Metal/semiconductor interface
KW - STM
KW - surface x ray diffraction
KW - Metal/semiconductor interface
KW - STM
KW - surface x ray diffraction
UR - http://hdl.handle.net/10807/17577
U2 - 10.1103/PhysRevB.57.3749
DO - 10.1103/PhysRevB.57.3749
M3 - Article
SN - 1098-0121
SP - 3749
EP - 3752
JO - PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS
JF - PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS
ER -