BISMUTH-INDUCED ELECTRONIC STATES AT (2X1)-BI/III-V(110) INTERFACES

Luca Gavioli, Maria Grazia Betti, Carlo Mariani, Davide Berselli

Risultato della ricerca: Contributo in rivistaArticolo in rivistapeer review

5 Citazioni (Scopus)

Abstract

An investigation and a comparison of the Bi-induced electronic states at the (2 X 1)-Bi/InSb(110) and (2 X 1)Bi/GaSb(110) interfaces is presented. The electronic transitions between Bi-induced states have been studied by high-resolution electron energy loss spectroscopy: a huge absorption structure is found at 0.48 eV in the stable (2 X 1) reconstructed phase for the Bi/InSb(110) interface, and at 0.55 eV for the (2 X 1)-Bi/GaSb(110) interface. This feature distinguishes an interband electronic transition between Bi-induced filled and empty electronic states, for both (2 X 1)-symmetry interfaces. Moreover, the Bi-induced occupied states are detected in the valence band for both systems, by ultra-violet photoemission spectroscopy.
Lingua originaleEnglish
pagine (da-a)496-500
Numero di pagine5
RivistaSurface Science
Volume331-333
DOI
Stato di pubblicazionePubblicato - 1995

Keywords

  • BISMUTH
  • CHEMISORPTION
  • ELECTRON ENERGY LOSS SPECTROSCOPY
  • GALLIUM ARSENIDE
  • INDIUM ANTIMONIDE
  • PHOTOELECTRON SPECTROSCOPY
  • SURFACE ELECTRONIC PHENOMENA

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