Adsorption sites at Cs nanowires grown on the InAs(110) surface

We present a high-resolution ultraviolet photoelectron spectroscopy\r\n study of the room temperature Cs chain formation on InAs(110), analysing\r\n the valence band spectra and core levels in the whole coverage range\r\n from the self-assembling of the Cs chains to the cluster uptake at\r\n saturation coverage. The valence band data shows an insulating behaviour\r\n up to saturation coverage. The adsorption sites have been monitored by\r\n means of Cs-4d, In-4d and As-3d core levels. The Cs-4d core-level data\r\n shows two distinct components, consistent with the presence of two\r\n unequivalent Cs adsorption sites in the Cs nanowire. The In-4d and As-3d\r\n levels show Cs-induced extra components due to electronic level\r\n re-hybridization to the substrate atoms, and predominant charge transfer\r\n from Cs adatoms to In, in agreement with recent theoretical\r\n calculations. (C) 2001 Elsevier Science B.V. All rights reserved.