Surface electronic structure at Si(100)-(2x1)

Luca Gavioli; Maria Grazia Betti; A Cricenti; Carlo Mariani

doi:10.1016/0368-2048(95)02466-2

Surface electronic structure at Si(100)-(2x1)

Luca Gavioli^*
, Maria Grazia Betti
, A Cricenti
, Carlo Mariani

^*Corresponding author

University of Modena and Reggio Emilia

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The surface electronic structure of the clean Si(100)-(2x1) surface at\r\n room temperature is studied by high-resolution electron-energy-loss\r\n spectroscopy. Main absorption edge is detected at similar to 0.4 eV,\r\n which corresponds to the energy gap of the system, further structures\r\n are singled out at 0.8 and 1.25 eV and ascribed to interband electronic\r\n transitions between dimer-related levels. The paramount importance of\r\n cleanness is addressed showing and quantifying the effect of the\r\n residual gas atmosphere (that can be present in ultrahigh vacuum) on the\r\n electronic structure.

Original language	English
Pages (from-to)	541-545
Number of pages	5
Journal	Journal of Electron Spectroscopy and Related Phenomena
Volume	76
Issue number	N/A
DOIs	https://doi.org/10.1016/0368-2048(95)02466-2
Publication status	Published - 1995

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Radiation
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Spectroscopy
Physical and Theoretical Chemistry

Keywords

ANGLE-RESOLVED-PHOTOEMISSION
ANTIMONY
DIMERS
LOW-TEMPERATURE
RECONSTRUCTED SURFACES
SCANNING TUNNELING MICROSCOPY
SI(001)
SI(100)2X1 SURFACE
STATES

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10.1016/0368-2048(95)02466-2

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title = "Surface electronic structure at Si(100)-(2x1)",

abstract = "The surface electronic structure of the clean Si(100)-(2x1) surface at\textbackslash{}r\textbackslash{}n room temperature is studied by high-resolution electron-energy-loss\textbackslash{}r\textbackslash{}n spectroscopy. Main absorption edge is detected at similar to 0.4 eV,\textbackslash{}r\textbackslash{}n which corresponds to the energy gap of the system, further structures\textbackslash{}r\textbackslash{}n are singled out at 0.8 and 1.25 eV and ascribed to interband electronic\textbackslash{}r\textbackslash{}n transitions between dimer-related levels. The paramount importance of\textbackslash{}r\textbackslash{}n cleanness is addressed showing and quantifying the effect of the\textbackslash{}r\textbackslash{}n residual gas atmosphere (that can be present in ultrahigh vacuum) on the\textbackslash{}r\textbackslash{}n electronic structure.",

keywords = "ANGLE-RESOLVED-PHOTOEMISSION, ANTIMONY, DIMERS, LOW-TEMPERATURE, RECONSTRUCTED SURFACES, SCANNING TUNNELING MICROSCOPY, SI(001), SI(100)2X1 SURFACE, STATES, ANGLE-RESOLVED-PHOTOEMISSION, ANTIMONY, DIMERS, LOW-TEMPERATURE, RECONSTRUCTED SURFACES, SCANNING TUNNELING MICROSCOPY, SI(001), SI(100)2X1 SURFACE, STATES",

author = "Luca Gavioli and Betti, \{Maria Grazia\} and A Cricenti and Carlo Mariani",

year = "1995",

doi = "10.1016/0368-2048(95)02466-2",

language = "English",

volume = "76",

pages = "541--545",

journal = "Journal of Electron Spectroscopy and Related Phenomena",

issn = "0368-2048",

publisher = "Elsevier B.V.",

number = "N/A",

}

TY - JOUR

T1 - Surface electronic structure at Si(100)-(2x1)

AU - Gavioli, Luca

AU - Betti, Maria Grazia

AU - Cricenti, A

AU - Mariani, Carlo

PY - 1995

Y1 - 1995

N2 - The surface electronic structure of the clean Si(100)-(2x1) surface at\r\n room temperature is studied by high-resolution electron-energy-loss\r\n spectroscopy. Main absorption edge is detected at similar to 0.4 eV,\r\n which corresponds to the energy gap of the system, further structures\r\n are singled out at 0.8 and 1.25 eV and ascribed to interband electronic\r\n transitions between dimer-related levels. The paramount importance of\r\n cleanness is addressed showing and quantifying the effect of the\r\n residual gas atmosphere (that can be present in ultrahigh vacuum) on the\r\n electronic structure.

AB - The surface electronic structure of the clean Si(100)-(2x1) surface at\r\n room temperature is studied by high-resolution electron-energy-loss\r\n spectroscopy. Main absorption edge is detected at similar to 0.4 eV,\r\n which corresponds to the energy gap of the system, further structures\r\n are singled out at 0.8 and 1.25 eV and ascribed to interband electronic\r\n transitions between dimer-related levels. The paramount importance of\r\n cleanness is addressed showing and quantifying the effect of the\r\n residual gas atmosphere (that can be present in ultrahigh vacuum) on the\r\n electronic structure.

KW - ANGLE-RESOLVED-PHOTOEMISSION

KW - ANTIMONY

KW - DIMERS

KW - LOW-TEMPERATURE

KW - RECONSTRUCTED SURFACES

KW - SCANNING TUNNELING MICROSCOPY

KW - SI(001)

KW - SI(100)2X1 SURFACE

KW - STATES

KW - ANGLE-RESOLVED-PHOTOEMISSION

KW - ANTIMONY

KW - DIMERS

KW - LOW-TEMPERATURE

KW - RECONSTRUCTED SURFACES

KW - SCANNING TUNNELING MICROSCOPY

KW - SI(001)

KW - SI(100)2X1 SURFACE

KW - STATES

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U2 - 10.1016/0368-2048(95)02466-2

DO - 10.1016/0368-2048(95)02466-2

M3 - Article

SN - 0368-2048

VL - 76

SP - 541

EP - 545

JO - Journal of Electron Spectroscopy and Related Phenomena

JF - Journal of Electron Spectroscopy and Related Phenomena

IS - N/A

ER -

Surface electronic structure at Si(100)-(2x1)

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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