Structure and missing-dimer probability distribution of the (2 x n)Bi-induced Si(001) surface

Luca Gavioli, Carlo Mariani, Maria Grazia Betti, N. Jedrecy, C. Mariani, V. Corradini, M. G. Betti, B. Croset, C. De Beauvais

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2 Citations (Scopus)

Abstract

Bismuth adsorbed on Si(001) induces successive (2 x n) phases after annealing, with n ranging from 12 to 5. The structure consists of dimer rows, with missing-dimer defects forming and ordering in the perpendicular direction. We investigated by grazing-incidence X-ray diffraction the n = 6.45 surface, which results from missing-dimer line ordering each 6 or 7 units. The structural refinement is based either on a (2 x 6) or a (2 x 7) cell. The Bi dimers are lying at 1.86 Angstrom on top of Si, with a dimer bond length of 3.11 Angstrom. They are displaced along the row towards the missing dimer, while the Si atoms are at bulk positions. A photoemission study of the Bi 5d and Si 2p core levels confirms the model of symmetric Bi dimers, after breaking Si dimers, The diffracted intensity is calculated using the phase-matrix method. The positions and widths of the peaks are analysed in terms of the dimer blocks probability distribution. (C) 1999 Elsevier Science B.V. All rights reserved.
Original languageEnglish
Pages (from-to)367-372
Number of pages6
JournalSurface Science
Volume433-435
DOIs
Publication statusPublished - 1999

Keywords

  • X-ray diffraction
  • bismuth
  • photoemission
  • silicon
  • surface structure

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