Interface roughness effects in Gaussian superlattices

Francesco Banfi, Vittorio Bellani, Ignacio Gómez, Enrique Diez, Francisco Domínguez-Adame

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We investigate the effect of unintentional disorder on the pass-band capabilities of a GaAs-Al(x)Gal(1-x)As superlattice with Gaussian modulated Al mole fraction. We prove that if fluctuations of vertical disorder can be kept below two monolayers the pass-band filter capabilities are not severely degraded. In addition Al fluctuation as encountered in typical molecular beam epitaxy growth conditions does not degrade the filter capabilities of the Gaussian superlattice. We introduce a new model to deal with lateral disorder and prove that in a molecular beam epitaxial growth process lateral disorder effects are negligible as compared with the vertical disorder ones.
Original languageEnglish
Pages (from-to)304-309
Number of pages6
JournalSemiconductor Science and Technology
Volume16
DOIs
Publication statusPublished - 2001

Keywords

  • disorder
  • quantum interference devices
  • quantum transport
  • superlattice

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