Dynamics of the Si(100) surface

Luca Gavioli, Maria Grazia Betti, Carlo Mariani, Cinzia Cepek, A. I. Shkrebtii, R. Del Sole, C. Cepek, A. Goldoni, S. Modesti

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

The Si(100) surface is constituted by asymmetric dimers and presents complex dynamical behaviour. To understand the influence of dimer motion on the surface electronic properties, we investigate the dynamics of the Si(100) surface experimentally and theoretically in a wide temperature range (150-00K). High-resolution electron energy-loss spectroscopy measurements are compared to a microscopic tight-binding calculation of the dielectric function. An instantaneous symmetric-like nat dimer configuration due to fast dimer-flipping is responsible for the electronic transition at 0.8 eV and for the surface metallization observed at 900 K,well below the suggested incomplete melting temperature (1400 K).
Original languageEnglish
Pages (from-to)360-364
Number of pages5
JournalSurface Science
Volume377
DOIs
Publication statusPublished - 1997

Keywords

  • dimer motion
  • electronic structure
  • surface metallization
  • surface dynamics

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