Adsorption sites at Cs nanowires grown on the InAs(110) surface

Maria Grazia Betti, V. Corradini, G. Bertoni, Giuseppe Bertoni, Sandra Gardonio, Carlo Mariani, Luca Gavioli, R. Belkhou, A. Taleb-Ibrahimi

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


We present a high-resolution ultraviolet photoelectron spectroscopy study of the room temperature Cs chain formation on InAs(110), analysing the valence band spectra and core levels in the whole coverage range from the self-assembling of the Cs chains to the cluster uptake at saturation coverage. The valence band data shows an insulating behaviour up to saturation coverage. The adsorption sites have been monitored by means of Cs-4d, In-4d and As-3d core levels. The Cs-4d core-level data shows two distinct components, consistent with the presence of two unequivalent Cs adsorption sites in the Cs nanowire. The In-4d and As-3d levels show Cs-induced extra components due to electronic level re-hybridization to the substrate atoms, and predominant charge transfer from Cs adatoms to In, in agreement with recent theoretical calculations. (C) 2001 Elsevier Science B.V. All rights reserved.
Original languageEnglish
Pages (from-to)35-42
Number of pages8
JournalSurface Science
Publication statusPublished - 2001


  • alkali metals
  • indium arsenide
  • metal-semiconductor interfaces
  • soft X-ray photoelectron spectroscopy chemisorption


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