Academic Field: Physics of Matter

Research output

Research output per year 1994 2009 2010 2011 2012 2013 2014 2015 2017 2018 2019 2020 2021 2022 2023 2024

• 422 Article
• 16 Conference contribution
• 13 Conference article
• 10 Chapter
• 1 More
  • 1 Meeting Abstract

Research output per year

Research output per year

Search results

• 2003

  Photoemission spectroscopy study of the hole-doped Haldane chain Y2-xSrxBaNiO5

  Fagot-Revurat, Y., Malterre, D., Lannuzel, F. X., Janod, E., Payen, C., Gavioli, L. & Bertran, F., 2003, In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS. 200, p. 242-247 6 p.

  Research output: Contribution to journal › Article › peer-review

  • Photoemission 100%
  • Energy 100%
  • Doping 100%
  • Valence Band 50%
  • Photon 50%

• Potassium assembled on the InAs(110) surface: from nanowires to two-dimensional layers

  Gavioli, L., Padovani, M., Spiller, E., Sancrotti, M. & Betti, M. G., 2003, In: Applied Surface Science. 212, p. 47-51 5 p.

  Research output: Contribution to journal › Article › peer-review

  • Potassium 100%
  • Symmetry 40%
  • Chain 40%
  • Wire 40%
  • Scanning Tunneling Microscopy 40%
  4 Citations (Scopus)

• Self-assembling of potassium nanostructures on InAs(110) surface

  Gavioli, L., Padovani, M., Spiller, E., Sancrotti, M. & Betti, M. G., 2003, In: Surface Science. 532, p. 666-670 5 p.

  Research output: Contribution to journal › Article › peer-review

  • Surface 100%
  • Nanomaterial 75%
  • Nanocrystalline Material 75%
  • Potassium 50%
  • Scanning Tunneling Microscopy 25%
  6 Citations (Scopus)
• 2002

  Quasiparticle scattering processes in a model Fermi liquid: 1T-TiTe2

  Perfetti, L., Rojas, C., Reginelli, A., Gavioli, L., Berger, H., Margaritondo, G. & Grioni, M., 2002, In: Surface Review and Letters. 9, p. 1117-1119 3 p.

  Research output: Contribution to journal › Article › peer-review

  • Electron Particle 100%
  • Quasiparticle 100%
  • Scattering 100%
  • Electron-Phonon Interaction 50%
  • Angle Resolved Synchrotron Radiation Photoelectron Spectroscopy 50%
  2 Citations (Scopus)
• 2001

  Adsorption sites at Cs nanowires grown on the InAs(110) surface

  Betti, M. G., Corradini, V., Bertoni, G., Bertoni, G., Gardonio, S., Mariani, C., Gavioli, L., Belkhou, R. & Taleb-Ibrahimi, A., 2001, In: Surface Science. 477, p. 35-42 8 p.

  Research output: Contribution to journal › Article › peer-review

  • Core Level 100%
  • Adsorption 100%
  • Valence Band 66%
  • Nanowire 66%
  • Concentration 66%
  14 Citations (Scopus)

• Fine structure in high-resolution photoemission spectra of quasi-two-dimensional 1T-TaS2

  Hayoz, J., Naumović, D., Berger, H., Perfetti, L., Taleb-Ibrahimi, A., Schlapbach, L., Gavioli, L., Aebi, P. & Pillo, T., 2001, In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. 64, p. 245105-245108 4 p.

  Research output: Contribution to journal › Article › peer-review

  • Charge Density Wave 100%
  • Structure 75%
  • Angle-Resolved Photoemission Spectroscopy 50%
  • Energy 50%
  • Spectra 50%
  20 Citations (Scopus)

• High resolution angle-resolved photoemission investigation of the quasiparticle scattering processes in a model Fermi liquid: 1T-TiTe2

  Gavioli, L., 2001, In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. p. 115102-115109 8 p.

  Research output: Contribution to journal › Article › peer-review

  • Electron Particle 100%
  • Quasiparticle 100%
  • Scattering 66%
  • Lineshape 66%
  • Linewidth 66%
  1 Citation (Scopus)
• 1999

  Core-level photoemission study of 2D ordered Bi/Si(100) interfaces

  Corradini, V., Gavioli, L. & Mariani, C., 1999, In: Surface Science. 430, p. 126-136 11 p.

  Research output: Contribution to journal › Article › peer-review

  • Core Level 100%
  • Photoemission 66%
  • Electronic State 33%
  • 100-2 33%
  • Monolayer 33%
  7 Citations (Scopus)

• Diffraction analysis of a disordered surface, modelled on a probability distribution of reconstructed blocks: Bi/Si(001)-(2xn), n = 6.45

  Jedrecy, N., Gavioli, L., Mariani, C., Mariani, C., Betti, M. G., Betti, M. G., Croset, B. & De Beauvais, C., 1999, In: JOURNAL OF PHYSICS. CONDENSED MATTER. 11, p. 1935-1951 17 p.

  Research output: Contribution to journal › Article › peer-review

  • Diffraction 100%
  • Position 75%
  • Surface Property 50%
  • Periodicity 50%
  • Length 50%
  5 Citations (Scopus)

• Novel growth of Ag islands on Si(111): Plateaus with singular height

  Gavioli, L., 1999, In: Physical Review Letters. p. 129-132 4 p.

  Research output: Contribution to journal › Article › peer-review

  • Growth 100%
  • Island 100%
  • Height 100%
  • Electrical Resistivity 66%
  • Plateau 66%
  196 Citations (Scopus)

• Structure and missing-dimer probability distribution of the (2 x n)Bi-induced Si(001) surface

  Gavioli, L., Mariani, C. & Betti, M. G., 1999, In: Surface Science. 433-435, p. 367-372 6 p.

  Research output: Contribution to journal › Article › peer-review

  • Dimer 100%
  • X-Ray Diffraction 30%
  • Probability Theory 20%
  • Position 20%
  • Ordering 20%
  2 Citations (Scopus)
• 1998

  A Monte-Carlo simulation of low energy photoelectron scattering in Cs2Te

  Ferrini, G., Michelato, P. & Parmigiani, F., 1998, In: Solid State Communications. 106, p. 21-26 6 p.

  Research output: Contribution to journal › Article › peer-review

  • Electron Particle 100%
  • Energy 100%
  • Scattering 75%
  • Photoelectron 50%
  • Kinetic Energy 50%
  16 Citations (Scopus)

• Bismuth-induced restructuring of the GaSb(110) surface

  Gavioli, L., 1998, In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. p. 3749-3752 4 p.

  Research output: Contribution to journal › Article › peer-review

  • Surface 100%
  • Surface Property 100%
  • Atom 75%
  • Reconstruction 50%
  • Scanning Tunneling Microscopy 25%
  12 Citations (Scopus)

• Bismuth-induced restructuring of the GaSb(110) surface

  Gavioli, L., 1998, In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. p. 3749-3752 4 p.

  Research output: Contribution to journal › Article › peer-review

  • Surface 100%
  • Surface Property 100%
  • Atom 75%
  • Reconstruction 50%
  • Scanning Tunneling Microscopy 25%
  12 Citations (Scopus)

• Electronic properties of the Bi/Si(100) interface

  Gavioli, L., Betti, M. G. & Mariani, C., 1998, In: Surface Science. 409, p. 207-212 6 p.

  Research output: Contribution to journal › Article › peer-review

  • Band Gap 100%
  • Electronic Property 100%
  • Adatoms 100%
  • Monolayer 100%
  • Ultra Violet Photoemission Spectroscopy 100%
  5 Citations (Scopus)
• 1997

  Dynamics of the Si(100) surface

  Gavioli, L., Betti, M. G., Mariani, C., Shkrebtii, A. I., Del Sole, R., Cepek, C., Cepek, C., Goldoni, A. & Modesti, S., 1997, In: Surface Science. 377, p. 360-364 5 p.

  Research output: Contribution to journal › Article › peer-review

  • Surface 100%
  • Surface Electronic Property 50%
  • Melting Point 25%
  • Asymmetry 25%
  • Electronic Transition 25%
  13 Citations (Scopus)

• Electronic properties of (2xn)-Bi reconstructions on Si(100)

  Gavioli, L., Betti, M. G. & Mariani, C., 1997, In: Surface Science. 377, p. 215-219 5 p.

  Research output: Contribution to journal › Article › peer-review

  • Surface 100%
  • Surfaces 100%
  • Gaps 100%
  • Electronic Property 66%
  • 100-2 66%
  5 Citations (Scopus)
• 1996

  Dynamics-induced surface metallization of Si(100)

  Gavioli, L., Betti, M. G. & Mariani, C., 1996, In: Physical Review Letters. 77, p. 3869-3872 4 p.

  Research output: Contribution to journal › Article › peer-review

  • Surface 100%
  • Metallization 100%
  • Melting Point 33%
  • Electron Particle 33%
  • Ultra-Violet Photoelectron Spectroscopy 33%
  41 Citations (Scopus)
• 1995

  BISMUTH-INDUCED ELECTRONIC STATES AT (2X1)-BI/III-V(110) INTERFACES

  Betti, M. G., Gavioli, L. & Mariani, C., 1995, In: Surface Science. 331-333, p. 496-500 5 p.

  Research output: Contribution to journal › Article › peer-review

  • Electronic State 100%
  • Electronic Transition 66%
  • Valence Band 33%
  • Symmetry 33%
  • Ultra-Violet Photoelectron Spectroscopy 33%
  5 Citations (Scopus)

• OVERLAYER GROWTH AND ELECTRONIC PROPERTIES OF THE BI/GASB(11O) INTERFACE

  Gavioli, L., Betti, M. G. & Mariani, C., 1995, In: PHYSICAL REVIEW. B, CONDENSED MATTER. 51, p. 16822-16831 10 p.

  Research output: Contribution to journal › Article › peer-review

  • Symmetry 100%
  • Electronic Property 66%
  • Monolayer 66%
  • Structure 66%
  • Valence Band 33%
  9 Citations (Scopus)

• Surface electronic structure at Si(100)-(2x1)

  Gavioli, L., Betti, M. G., Cricenti, A. & Mariani, C., 1995, In: Journal of Electron Spectroscopy and Related Phenomena. 76, p. 541-545 5 p.

  Research output: Contribution to journal › Article › peer-review

  • Electronic Structure 100%
  • Surface 100%
  • Ultrahigh Vacuum 33%
  • Room Temperature 33%
  • Residual Gas 33%
  9 Citations (Scopus)
• 1994

  BISMUTH ON GASB(110): ELECTRONIC AND DIELECTRIC PROPERTIES

  Gavioli, L., Betti, M. G., Casarini, P. & Mariani, C., 1994, In: PHYSICAL REVIEW. B, CONDENSED MATTER. 49, p. 2911-2914 4 p.

  Research output: Contribution to journal › Article › peer-review

  • Electronic Property 100%
  • Structure 100%
  • Energy 100%
  • Surface 100%
  • Dielectric Property 100%
  11 Citations (Scopus)